Formation of Color Centers and Concentration of Defects in Boron Carbide Irradiated at Low Gamma Radiation Doses.

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dc.contributor.author Mirzayev, Matlab Nabi
dc.contributor.author Meh, Ravan Nadir
dc.contributor.author Melikova, Sevinj Zellabdin
dc.contributor.author Jabarov, Sakin Hamid
dc.contributor.author Thabethe, Thabsile Theodora
dc.contributor.author Biira, Saphina
dc.contributor.author Kurbanov, Mirze Abdulla
dc.contributor.author Tiep, Nguyen Van
dc.date.accessioned 2021-09-29T07:36:27Z
dc.date.available 2021-09-29T07:36:27Z
dc.date.issued 2019-02-04
dc.identifier.citation Mirzayev, Matlab N. . . . [et al.] (2019). Formation of Color Centers and Concentration of Defects in Boron Carbide Irradiated at Low Gamma Radiation Doses. Journal of the Korean Physical Society, Vol. 74, No. 4, pp. 363∼367. DOI: 10.3938/jkps.74.363. en_US
dc.identifier.issn 0374-4884
dc.identifier.issn 1976-8524
dc.identifier.uri https://doi.org/10.60682/4pq3-dh56
dc.description Article en_US
dc.description.abstract In the present work, boron-carbide (B4C) samples (purity of 99.5% and density of 1.80 g/cm3) were irradiated by using gamma radiation from a 60Co gamma source. Gamma irradiation of the samples was carried out at doses 48.5, 97, 145.5 and 194 kGy. The samples were analysed using a UV-V Gary 50 Scan spectrophotometer. The effect of different irradiation doses on the defects created in the B4C samples was investigated. In the B4C samples, the formation processes for color centers depended on the gamma irradiation dose. The calculated activation energies at room temperature essential for the formation of F and F+ color centers ranged from 1.89 - 2.05 eV. Keywords: Boron carbide, Gamma irradiation dose, Color centers, Activation energy, Defect concentration en_US
dc.description.sponsorship Busitema University, University of Pretoria en_US
dc.language.iso en en_US
dc.publisher Busitema University ; Korean Physical Society en_US
dc.subject Boron carbide en_US
dc.subject Gamma irradiation dose en_US
dc.subject Color centers en_US
dc.subject Activation energy en_US
dc.subject Defect concentration en_US
dc.title Formation of Color Centers and Concentration of Defects in Boron Carbide Irradiated at Low Gamma Radiation Doses. en_US
dc.type Article en_US


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