Investigating the structural changes induced by SHI on WSiC samples.

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dc.contributor.author Thabethe, T.T.
dc.contributor.author Ntsoane, T.P.
dc.contributor.author Biira, Saphina
dc.contributor.author Njoroge, E.G.
dc.contributor.author Hlatshwayo, T.T.
dc.contributor.author Skuratov, V. A.
dc.contributor.author Malherbe, J.B.
dc.date.accessioned 2021-09-28T11:37:26Z
dc.date.available 2021-09-28T11:37:26Z
dc.date.issued 2020
dc.identifier.citation Thabethe, T. T . . . [eta al.]. (2020). Investigating the structural changes induced by SHI on WSiC samples. https://doi.org/10.1016/j.vacuum.2020.109230. en_US
dc.identifier.issn 0042-207X
dc.identifier.uri https://doi.org/10.60682/8zgb-3k71
dc.description Article en_US
dc.description.abstract The structural modification of tungsten-SiC samples irradiated with Xe26þ swift heavy ions (SHIs) was investigated. Tungsten (W) thin films were deposited on 6H–SiC using e-beam. After deposition, the W–SiC samples were irradiated by 167 MeV Xe26þ ions to fluences of 1012 cm 2, 1013 cm 2 and 1014 cm 2 at room temperature. The sample composition, phase identification, residual stress component and surface morphology were investigated with Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results indicated that the as-deposited samples were composed of W and SiC, with no reaction between them. The samples irradiated to a fluence of 1012 cm 2 showed that a reaction between W and SiC took place resulting in the formation of WSi2 and WC phases. The samples irradiated to fluences of 1013 and 1014 cm 2 showed further reactions between W and SiC with WSi2 and WC being the only phases formed. The SiC substrate had bi-axial compressive stress which did not excess 700 MPa after irradiating to the highest fluence. The W layer deposited on SiC was flat and homogeneous after deposition. A textured surface with identifiable grains was observed after the SHI irradiations. Keywords: Tungsten, Thin film, SiC, SHIs, Irradiation, Reaction en_US
dc.description.sponsorship Busitema University, University of Pretoria en_US
dc.language.iso en en_US
dc.publisher Busitema University ; Elsevier en_US
dc.subject Tungsten en_US
dc.subject Thin film en_US
dc.subject SiC en_US
dc.subject SHIs en_US
dc.subject Irradiation en_US
dc.subject Reaction en_US
dc.title Investigating the structural changes induced by SHI on WSiC samples. en_US
dc.type Article en_US


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