CVD growth of ZrC layers at different temperatures.

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dc.contributor.author Alawad, BAB
dc.contributor.author Biira, Saphina
dc.contributor.author Bissett, H
dc.contributor.author Nel, J. T
dc.contributor.author Hlatshwayo, T. T
dc.contributor.author Crouse, P. L
dc.contributor.author Malherbe, J. B
dc.date.accessioned 2021-09-16T11:31:53Z
dc.date.available 2021-09-16T11:31:53Z
dc.date.issued 2016
dc.identifier.citation Alawad, B.A.B . . . [et al.] (2016). “CVD Growth of ZrC Layers at Different Temperatures.” Physics and Materials Chemistry, vol. 4, no. 1 (2016) 6-9. doi: 10.12691/pmc-4-1-2. en_US
dc.identifier.uri https://doi.org/10.60682/dk85-mc22
dc.description Article en_US
dc.description.abstract Zirconium carbide (ZrC) layers were grown on a graphite substrate by chemical vapour deposition (CVD) at 1250°C, 1300°C and 1350°C. Zirconium tetrachloride (ZrCl4), methane (CH4), hydrogen (H2) and argon (Ar) were used as precursors. The deposited ZrC layers were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). XDR showed ZrC characteristic peaks with free carbon. Free carbon incorporated in the ZrC layer increased with deposition temperature. The average of grain size also increased with deposition temperature. The latter findings were confirmed by SEM results. Keywords: chemical vapour deposition (CVD), ZrC, XRD, SEM en_US
dc.description.sponsorship Busitema University, University of Pretoria. en_US
dc.language.iso en en_US
dc.publisher Busitema University ; SciEP en_US
dc.subject Chemical vapour deposition en_US
dc.subject ZrC en_US
dc.subject XRD en_US
dc.subject SEM en_US
dc.title CVD growth of ZrC layers at different temperatures. en_US
dc.type Article en_US


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